SD 3.01 | SD Card

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Product Brief

SMART’s high performance, industrial grade SD 3.01 SD Cards support OEM markets such as networking, telecommunications and data communications, embedded computing, medical, automotive, and industrial applications.

Incorporating onboard error detection and correction algorithms and static and dynamic Wear-Leveling techniques, SMART’s SD 3.01 SD products ensure years of reliable operation over a product’s life.

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Ordering Information

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Part Number

Capacity

Note

SH9SD032GSNIDSC02
32GB
C-temp (0˚C to +70˚C)
SH9SD032GSNIDSI02
32GB
I-temp (-40℃ to 85℃)
SH9SD016GSNICSC02
16GB
C-temp (0˚C to +70˚C)
SH9SD016GSNICSI02
16GB
I-temp (-40℃ to 85℃)
SH9SD008GSNICSC02
8GB
C-temp (0˚C to +70˚C)
SH9SD008GSNICSI02
8GB
I-temp (-40℃ to 85℃)
SH9SD004GSMIBSC02
4GB
C-temp (0˚C to +70˚C)
SH9SD004GSMIBSI02
4GB
I-temp (-40℃ to 85℃)
SP9SD002GPBI9SC01
2GB
C-temp (0˚C to +70˚C)
SP9SD002GPBI9SE01
2GB
E-temp (-25˚C to +85˚C)
SP9SD002GPBI9SI01
2GB
I-temp (-40℃ to 85℃)
SP9SD001GPBI8SC01
1GB
C-temp (0˚C to +70˚C)
SP9SD001GPBI8SE01
1GB
E-temp (-25˚C to +85˚C)
SP9SD001GPBI8SI01
1GB
I-temp (-40℃ to 85℃)

Product Details

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Essentials

Product Series
SD 3.01
NAND Flash Technology
SLC
Interface
SD 3.01

Performance

Sequential Read (maximum)
Up to 98MB/s
Sequential Write (maximum)
Up to 75MB/s
Capacities
1GB 2GB 4GB 8GB 16GB 32GB

Reliability

TBW
1GB: 90TBW 2GB: 180TBW 4GB: 200TBW 8GB: 400TBW 16GB: 800TBW 32GB: 1620TBW (Sequential workload)
MTBF
> 3,000,000 hours

Environmental

Shock
1500G half-sine, 0.5 msec, 1 shock along each axis, X, Y, Z in each direction
Vibration
15g rms 10-2000 Hz, 3 axis
Operating Temperature
C-temp: 0℃ to +70℃ E-temp: -25℃ to +85℃ I-temp: -40℃ to +85℃
Storage Temperature
-40℃ to +85℃
Humidity
5% to 95%, non-condensing, relative humidity

Physical

Length
32mm
Width
24mm
Height
2.1mm

Technologies

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Advanced Error Detection & Correction
Advanced Error Detection & Correction

SMART’s Advanced Error Detection & Correction technology reinforces the ECC (Error Code Correction) engine and utilizes RAID (Redundant Array of Independent Disks) mechanism. Data is reconstructed by the prior stored parity in other pages. The recovered data will be stored in a new block, and the prior stored block will be refreshed.

Write Protection
Write Protection

Write Protection prevents drives from unauthorized data write via a hardware switch/pin or software command. With the write protection feature, users are guaranteed that their data cannot be over-written on the Flash device by triggering the write-protect function.

Wear-Leveling
Wear-Leveling

Wear-Leveling refers to the practice of ensuring certain NAND blocks aren’t written and erased more often than others. By preventing the overuse of particular blocks which could lead to device failure or data loss, Wear-Leveling therefore improves the life expectancy and endurance of Flash products.

Garbage Collection
Garbage Collection

Flash-based storage devices are different in the way they deal with previously deleted data compared to traditional disks. Data must be erased first before new data can be written to the same block in SSDs. Garbage Collection copies in-use data to a new block, and then deletes all data from the old one.

TRIM Command
TRIM Command

TRIM is a command with the help of which the operating system can tell the SSD which blocks are no longer needed and can be deleted, or are marked as free for rewriting. With the TRIM command, it not only reduces the Write Amplifier Factor (WAF) but also boost the data access speeds.

Over-Provisioning
Over-Provisioning

Over-Provisioning is a technology where a certain portion of the physical capacity of the memory is reserved for carrying out garbage collection, wear-leveling and bad block management. It effectively reduces the attribute of write amplification and extends the lifespan of an SSD.

Solutions

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From small industrial components deployed in automation systems to large equipment used for oil drilling, project operations are asked to provide precise instructions, occasionally in harsh environments. Therefore, it is critical to maintain the accuracy of data output in addition to maintaining continuous, stable operating performance.

With the rapid rise of IoT and IIoT, the demand for connectivity has transformed networking. Today’s networks are scaling at an exponential rate, processing huge amounts of data that are stored for analysis. Reliable, proven memory is vital to ensure the hyper-fast transmission of all that data, as well as storage of the data exchanged between edge devices and network hubs. Whether the scale of network is between two locations or built for thousands of connected devices in different places around the world, there will be huge amounts of data constantly being processed whenever the network is running. That is why the right memory solutions are so important – to ensure data will be processed quickly and stored securely regardless of the demand placed on the network.

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