DDR5-12800 ECC MRDIMM

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Product Brief

SMART Modular Technologies’ DDR5-12800 Multiplexed Rank DIMMs (MRDIMMs) represent a leap in memory technology, engineered to eliminate performance bottlenecks demanding data-intensive applications. By doubling the effective data rate of standard DDR5, MRDIMM provides unprecedented bandwidth for powering servers and compute platforms.

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DDR5-12800 ECC MRDIMM
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DDR5-12800 ECC MRDIMM
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Ordering Information

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Part Number

Capacity

Note

SRAG8RM548J-SM
128GB
C-temp (0˚C to +70˚C)
SRHG8RM564J-SQ
96GB
C-temp (0˚C to +70˚C)
SRHG8RM538J-SQ
96GB
C-temp (0˚C to +70˚C)
SR8G8RM544J-SQ
64GB
C-temp (0˚C to +70˚C)
SR8G8RM528J-SQ
64GB
C-temp (0˚C to +70˚C)
SR4G8RM528J-SQ
32GB
C-temp (0˚C to +70˚C)

Product Details

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Essentials

Technology
DDR5
Module Type
ECC MRDIMM
Temperature
C-temp: 0˚C to 70˚C
Component Configuration
4Gx4 8Gx4 2Gx8 3Gx8 6Gx8
Depth
32G 64G 96G 128G
Width
x80
Voltage
1.1V
Pin Count
288-Pin

Performance

Capacity
32GB 64GB 96GB 128GB
Data Rate
12800MT/s
Speed
PC5-44800
CL
CL = 36

Environmental

RoHS
Yes

Physical

Height
31.25mm

Technologies

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Eliminating Over 90% of Memory Reliability Failures
Eliminating Over 90% of Memory Reliability Failures

In our information-driven age, powerful High Performance Computing (HPC) platforms are processing massive amounts of data in an effort to unlock its value. To yield the insights necessary to move humankind forward, HPC solutions constantly evolve. Optimizing the reliability of the memory sub-system for maximum uptime is critical to success.

 

Anti-Sulfur Resistor
Anti-Sulfur Resistor

Exposure to sulfur dioxide causes a corrosive reaction when silver alloys encounter sulfur gasses or liquid. This typically decreases resistor conductivity and thus increases failure risks. SMART uses ASRs (Anti-Sulfur Resistors) when needed for SMART-built products, allowing them to operate reliably in harsh sulfur-rich environments to meet the highest industrial standards.

Solutions

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Along with increasing amount of IT devices and systems installed in modern enterprises, more and more data is generated and transported everyday between physical equipment and virtual spaces, like the cloud. In order to efficiently and effectively store and manage these quantities of data, it’s becoming necessary to build a data infrastructure that can accommodate in-house data centers or that can be outsourced to cloud service providers. Whether the data infrastructure is internal or external, the main purpose is to gather process and store the data under stable and secure conditions to ensure uninterrupted operation for the enterprises.

Accelerated AI and ML workloads often require high bandwidth memory to keep up with the massive amounts of data being processed. There's a need for memory architectures that can deliver higher bandwidth to match the computational capabilities of modern accelerators. This could involve innovations in DRAM design, such as wider memory buses, faster memory interfaces, or the integration of high-bandwidth memory (HBM) technologies.

High Performance Computing (HPC) represents a leading solution being used to model and understand complex issues such as weather, agriculture, and space. HPC applications require the ability to process data and perform complex calculations at high speeds in limited timeframes. For applications such as AI machine/deep learning, data analysis, or medical research, HPC can process massive amount of data in real time. As HPC increases, so will the demands for high performing and reliable memory to deliver on expectations.

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